8” Wafer MEMS Foundry
Silex’s commitment to exceeding our customers’ expectations is demonstrated in our class 1–10 MEMS 8-inch (200 mm) fab. This new ISO 9001:2000 certified facility combines the most advanced process technologies with state-of-the-art tool capabilities.
Our standard processes include proven technologies and proprietary processes such as the Silex Sil-Via® TSV and Zero-Crosstalk™ isolating substrate. Incorporating state-of-the-art deposition and electroplating equipment in our 8-inch fab enables us to offer unique functional capping technologies with integrated through-wafer metal vias, RF passives and coaxial feedthroughs—advanced technologies that are spearheading the MEMS industry in CMOS-to-MEMS integration.
8” Wafer Fab Capabilities
Lithography
- Contact 1:1
Minimum features: ~0.8 µm (vacuum contact mode) or ~3 µm (proximity mode) Alignment accuracy: ~1 µm (front side align), or ~2 µm (back side align) - Stepper 5:1
Minimum features: ~0.35 µm Alignment accuracy: ~0.1 µm - Photoresist coater
- Contact/proximity mode aligner
- Double-side lithography capabilities
- Resist thickness: 1-10 µm using positive and negative photoresist
Plasma Etching
- DRIE with high selectivity and feature aspect ratio <1:50
- Dielectric etching (oxide, nitride etc.)
- Polysilicon etching
- Metal etching (TiN, AlSiCu)
- Polymer etching/stripping
Plasma Deposition
- PECVD Oxide
- PECVD Nitride
- PECVD TEOS
- SACVD Oxide
Wafer Bonding
- Silicon fusion bonding
- Au-Si, Au-Sn eutectic bonding
- Anodic bonding
- Thermocompression bonding
- Adhesive bonding
- Bonding in controlled ambient/vacuum
- Megasonic or Brush wafer clean
Furnace Processes
- Wet/Dry/Mixed thermal oxidations (900 – 1050C)
- Annealing Processes (densification, bond, or forming gas)
- RTP
- Doping Processes (Ion Implantation, POCl3)
- LPCVD silicon (amorphous, poly) (in-situ P-doped Poly coming)
- LPCVD nitride (standard, low stress)
- LPCVD oxides (LTO, PSG, TEOS)
Wet Etching
- Fully automated Spin Solvent Tool (SST)
- Fully automated Spin Acid Tool (SAT)
Metallization
- Sputter deposition (Ti/TiN, W, Cu, AlSiCu, AlN, Mo)
- Electroplating with integrated seed layer etch (Ni, Au, Cu, Sn)
Metrology
- SEM
- Ellipsometer
- Interferometer
- Inspection microscopes
- CD Microscopes
- White light interferometer
- Surface profiler
- Film stress measurement
- Sheet resistance measurement
- Surfscan
- XRD
Testing
- Automated probing
- Test development for prototyping and volume production of MEMS devices
- Automated electrical parametric testing
- Customer specific test rigs
Back End
- Automated dicing of wafers and wafer stacks
- Au and Al wire bonding
- Epoxy and solder die attachment
- Lapping for wafer thinning/polishing